TPM21550

概述

The TPM21550 series consists of isolated dual-channel gate drivers that feature 4.1-A source and 6.4-A sink peak current. These drivers are specifically designed to power MOSFETs, IGBTs, and SiC MOSFETs, with ultra-low propagation delay and minimal pulse-width distortion.

The input side of the TPM21550 series is isolated from its two output drivers by a reinforced isolation barrier rated at 5 kVRMS, providing a typical of 150-V/ns common-mode transient immunity (CMTI). Additionally, the two secondary-side drivers feature internal functional isolation, enabling a working voltage of up to 1500 VDC.

Each driver within the series offers flexible configuration options, functioning as either two low-side drivers, two high-side drivers, or as a half-bridge driver with a programmable dead time. For safety, a dedicated control pin shuts down both outputs. The TPM21550x variant uses an active-high DIS pin with an internal pull-up; pulling DIS low enables normal operation, and leaving it open shuts down both outputs. The TPM21551x variant uses an active-high EN pin with an internal pull-down; pulling EN high enables normal operation, and leaving it open shuts down both outputs. Both variants include a fail-safe mechanism that forces both outputs low on a primary-side logic failure.

• Status

  Production

• Rating

  
  

• Number of Channels

  
  

• Supply Voltage (Min) (V)

  
  

• Supply Voltage (Max) (V)

  
  

• Iq per channel (typ) (μA)

  
  

• GBW (Typ) (MHz)

  
  

• Slew Rate (Typ) (V/μs)

  
  

• Rail-Rail In

  
  

• Rail-Rail Out

  
  

• Ishort (Typ) (mA)

  
  

• Vos (Max) (mV)

  
  

• Offset Drift (Typ) (μV/°C)

  
  

• Ib (typ) (pA)

  
  

• Vn at 1 kHz (Typ) (nV/rtHz)

  
  

• Peak Noise at 0.1 to 10Hz (μVpp)

  
  

• Shutdown/Disable

  
  

• Operating Temperature Range (℃)

  
  

• Features

  
  

• Package